My research interests include Sub-3D materials and nanostructures, Alternative semiconductor materials and devices, Spintronics, Nanomagnetics. Flexible Electronics etc.

I have worked on electrostatics and transport characteristics of III-V nanowire GAAFET; developed physically based Multidimensional self-consistent simulator and proposed compact models advised by Dr. Quazi Deen Mohd Khosru.

Recently, our group has proposed a novel Gaussian Transmission profile to calculate drain current of nanoscale devices accurately without involving mode-space approach. Check out my publications on this device here. The threshold voltage of this device cannot be tuned by changing the channel doping. So, our group has proposed a novel axially graded nanowire channel and achieved the expected tunability along with better oxide-semiconductor interface and lower gate leakage.

Besides, I have modeled the transport of Carbon nanotube MOSFET in near-ballistic regime. Recently, this work has been published in a prestigious journal, ECS Journal of Solid State Sci. & Technology.